D45VH10G

D44VH10(NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high−speed switching applications, such as switching regulators and high frequency inverters. The devices are also well−suited for drivers for high power switching circuits. Features • • • • • Fast Switching Key Parameters Specified @ 100°C Low Collector−Emitter Saturation Voltage Complementary Pairs Simplify Circuit Designs These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Emitter Voltage VCEV 100 Vdc Emitter Base Voltage VEB 7.0 Vdc IC 15 Adc Collector Current − Peak (Note 1) ICM 20 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 83 0.67 W W/°C −55 to 150 °C Collector Current − Continuous Operating and Storage Junction Temperature Range TJ, Tstg www.onsemi.com 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 EMITTER 3 4 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. D4xVH10G AYWW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 1.5 °C/W Thermal Resistance, Junction to Ambient RqJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 275 °C x A Y WW G = 4 or 5 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 8 1 Device Package Shipping D44VH10G TO−220 (Pb−Free) 50 Units/Rail D45VH10G TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: D44VH/D D44VH10 (NPN), D45VH10 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 80 − − − − − − 10 100 − − 10 35 20 − − − − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 2) (IC = 25 mAdc, IB = 0) Collector−Emitter Cutoff Current (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100°C) ICEV Emitter Base Cutoff Current (VEB = 7.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 (IC = 15 Adc, IB = 3.0 Adc, TC = 100°C) D44VH10 D45VH10 VCE(sat) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) D44VH10 (IC = 8.0 Adc, IB = 0.8 Adc) D45VH10 (IC = 8.0 Adc, IB = 0.4 Adc, TC = 100°C) D44VH10 (IC = 8.0 Adc, IB = 0.8 Adc, TC = 100°C) D45VH10 VBE(sat) − Vdc − − 0.4 − − 1.0 − − − − 0.8 1.5 Vdc − − 1.2 − − 1.0 − − 1.1 − − 1.5 − 50 − DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz) D44VH10 D45VH10 MHz Cob pF − − 120 275 − − td − − 50 tr − − 250 ts − − 700 tf − − 90 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc) Fall Time ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 D44VH10 (NPN), D45VH10 (PNP) 1000 1000 VCE = 1 V 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125°C −40°C 100 125°C 25°C 100 −40°C 10 10 0.01 0.1 1 0.01 10 10 IC, COLLECTOR CURRENT (AMPS) Figure 1. D44VH10 DC Current Gain Figure 2. D45VH10 DC Current Gain 1000 VCE = 5 V VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1 IC, COLLECTOR CURRENT (AMPS) 1000 25°C 125°C −40°C 100 10 125°C 25°C 100 −40°C 10 0.01 0.1 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. D44VH10 DC Current Gain Figure 4. D45VH10 DC Current Gain 0.6 0.40 VCE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 0.1 0.35 0.30 −40°C 0.25 0.20 25°C 0.15 125°C 0.10 0.05 VCE(sat) @ IC/IB = 10 0.5 0.4 −40°C 0.3 25°C 125°C 0.2 0.1 0 0 0.1 1 0.1 10 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44VH10 ON−Voltage Figure 6. D45VH10 ON−Voltage www.onsemi.com 3 10 D44VH10 (NPN), D45VH10 (PNP) 1.4 VBE(sat) @ IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.2 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 −40°C 1.0 0.8 125°C 0.6 25°C 0.4 0.2 0 0.1 1 10 0.1 Figure 7. D44VH10 ON−Voltage Figure 8. D45VH10 ON−Voltage PD, POWER DISSIPATION (WATTS) 1.0 ms 100 ms 10 10 ms TC ≤ 70° C dc DUTY CYCLE ≤ 50% 1.0 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 TA TC 3.0 60 2.0 40 TC 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TA 1.0 20 0 0.1 1.0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 60 100 120 80 T, TEMPERATURE (°C) 140 160 Figure 10. Power Derating 0.2 0.2 0.1 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 40 D = 0.5 0.3 0.07 0.05 10 IC, COLLECTOR CURRENT (AMPS) 50 30 20 5.0 3.0 2.0 1 IC, COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) VBE(sat) @ IC/IB = 10 1.2 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response www.onsemi.com 4 20 50 100 200 500 1.0 k D44VH10 (NPN), D45VH10 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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