DP2301S

DP2301S DP2301S P-Channel MOSFET General description P-Channel MOSFET Features: • VDS : -20V • ID : -2.3A • RDS(ON)( at VGS=-4.5V) ＜140 mohm • RDS(ON)( at VGS=-2.5V) ＜210 mohm • Trench Power MOSFET technology • Low RDS(ON) @VGS= -4.5V • High Current Handing Capability • Halogen-free、RoHS Compliant Package : SOT-23 Device Marking Code: Applications • DC/DC Converter for Portable Devices • High-side Load Switch • Device Type Device Marking DP2301S A1SHB High Speed line Driver Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameters Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -2.3 A Pulsed Drain Current (note 1) IDM -9 A Maximum Power Dissipation PD 1.0 W Thermal Resistance from Junction to Ambient (note 2) RθJA 125 ℃/W TJ、TSTG -50~+150 Junction and Storage Temperature www.doeshare.net ℃ Page 1 of 5 DP2301S Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameters Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = - 250µA -20 IDSS VDS = - 20V,VGS = 0V -- -- -1 µA IGSS VGS = ± 10V, VDS = 0V -- -- ±100 nA VGS(th) VDS =VGS, ID = - 250µA -0.4 -0.6 -1.0 V VGS = - 4.5V, ID = -2A -- 125 140 mΩ VGS = - 3.3V, ID = - 1A -- 140 170 mΩ VGS = - 2.5V, ID = - 1A -- 170 210 mΩ IS= - 1A, VGS = 0V -- -0.83 -1.2 V Zero gate voltage drain current Gate-body leakage current Gate threshold voltage (note 3) Drain-source on-resistance (note 3) RDS(on) Diode forward voltage (note 3) VSD -- -- V Dynamic Characteristics (note 4) Input Capacitance Ciss VDS= -10V,VGS=0V, f =1MHz -- 177 -- pF -- 30 -- pF Output Capacitance Coss Reverse Transfer Capacitance Crss -- 25 -- pF td(on) -- 11 -- ns -- 32 -- ns -- 25 -- ns Switching Characteristics (note 4) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) VDD= -10V,ID= -2A,RG= 3.3Ω, VGS= -4.5V Turn-off fall time tf -- 38 -- ns Total Gate Charge Qg -- 5.3 -- nC Gate-Source Charge Qgs -- 0.7 -- nC Gate-Drain Charge Qgd -- 1.4 -- nC VDS= -10V,ID=-2A, VGS=-4.5V Note: 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3.Pulse test : Pulse width≤300μs, duty cycle≤2%.Guaranteed by design, not subject to production. www.doeshare.net Page 2 of 5 DP2301S Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure2. Transfer Characteristics Figure4. Gate Charge SOT-323 Package Outline www.doeshare.net Page 3 of 5 DP2301S SOT-23 Package Outline Dimensions Precautions: PCB Design www.doeshare.net Page 4 of 5 DP2301S Important Notice and Disclaimer DOESHARE has used reasonable care in preparing the information included in this document, but DOESHARE does not warrant that such information is error free. DOESHARE assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. DOESHARE no warranty, representation or guarantee regarding the documents, circuits and products specification, DOESHARE reservation rights to make changes for any documents, products, circuits and specifications at any time without notice. Purchasers are solely responsible for the choice, selection and use of the DOESHARE products and services described herein, and DOESHARE assumes no liability whatsoever relating to the choice, selection or use of the products and services described herein. No license, express or implied, by implication or otherwise under any intellectual property rights of DOESHARE. Resale of DOESHARE products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by DOESHARE for the DOESHARE product or service described herein and shall not create or extend in any manner whatsoever, any liability of DOESHARE. www.doeshare.net Page 5 of 5