FZT955-MS

www.msksemi.com FZT955-MS Semiconductor Compiance PNP Transistors SOT-223 Ƶ Features 1 1. BASE 2. COLLECTOR ƽ Collector Current Capability IC=-4A 2 ƽ Collector Emitter Voltage VCEO=-140V 3 3. EMITTER ƽ Very low saturation voltages Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -140 Emitter - Base Voltage VEBO -6 IC -4 Peak Pulse Current ICM -10 Collector Power Dissipation PC 3 W RșJA 78 ć/W Collector Current - Continuous Unit V A Thermal Resistance, Junction to Ambient (Note 1 ) Operating and Storage Temperature Range TJ,Tstg ć -55 to 150 Note 1:For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still airconditions whilst operating in steady-state. Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 ȝAˈ IE=0 -180 Collector- emitter breakdown voltage VCER IC=-1 ȝA, RB ” 1kȍ -180 Collector- emitter breakdown voltage VCEO Ic= -10 mAˈ IB=0 -140 Emitter - base breakdown voltage VEBO IE= -100ȝ Aˈ IC=0 -6 Collector-base cut-off current ICBO Collector cut-off current R < 1kȍ Emitter cut-off current Collector-emitter saturation voltage ICER IEBO VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter turn-on voltage VBE(on) DC current gain Switching Times Collector output capacitance Transition frequency hFE Typ Max Unit V VCB= -150 V , IE=0 -50 nA VCB= -150 V , IE=0 , Ta = 100ć -1 ȝA VCE= -150 V , IE=0 -50 nA VCE= -150 V , IE=0 , Ta = 100ć -1 ȝA nA VEB= -6V , IC=0 -10 IC=-100 mA, IB=-5 mA -60 IC=-500 mA, IB=-50mA -120 IC=-1 A, IB=-100mA -150 IC=-3 A, IB=-300mA -370 IC=-3 A, IB=-300mA -1110 VCE= -5V, IC= -3A mV -950 VCE= -5V, IC= -10mA 100 VCE=- 5V, IC= -1 A 100 VCE= -5V, IC= -3 A 75 300 VCE= -5V, IC= -10 A 10 68 toff IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V Cob VCB= -20V,f=1MHz 40 pF VCE= -10V, IC= -100mA,f=50MHz 110 MHz ton fT ns 1030 www.msksemi.com FZT955-MS Semiconductor Compiance Typical Characterisitics IC/IB=50 1.6 1.6 - (Volts) V& (VDW - (Volts) V& (VDW 1.4 1.2 1.0 0.8 0.6 0.4 1.2 1.0 0.8 0.6 0.2 0 0.001 0.01 0.1 1 1.4 0 10 20 0.001 0.01 0.1 1 10 20 I&- &ROOHFWRU&XUUHQW$PSV I&- &ROOHFWRU&XUUHQW$PSV VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C 1.6 VCE=5V -55°C +25°C +100°C +175°C 1.6 300 IC/IB=10 1.0 200 0.8 0.6  100 0.4 - (Volts) V% (VDW 1.4 1.2 h)( - Typical Gain h)( - Normalised Gain 1.4 IC/IB=10 0.4 0.2 0.2 0 -55°C +25°C +175°C Tamb=25°C IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 10 20 1 0 0.001 0.01 0.1 1 10 20 I&- &ROOHFWRU&XUUHQW$PSV I&- &ROOHFWRU&XUUHQW$PSV hFE v IC VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.6 V% (- (Volts) 1.4 -55°C +25°C +100°C +175°C I& - Collector Current (Amps) 10 VCE=5V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 I&- &ROOHFWRU&XUUHQW$PSV VBE(on) v IC 10 20 1 0.1 0.01 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 1000 V&( - &ROOHFWRU9ROWDJH9ROWV Safe Operating Area www.msksemi.com FZT955-MS Semiconductor PACKAGE MECHANICAL DATA Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° REEL SPECIFICATION P/N FZT955-MS PKG SOT-223 QTY 1000 Compiance FZT955-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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